Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks-Reference-Cited by-同舟云学术

Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

Published:2015-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Wood Obert,Raghunathan Sudharshanan,Mangat Pawitter,Philipsen Vicky,Luong Vu,Kearney Patrick,Verduijn Erik,Kumar Aditya,Patil Suraj,Laubis Christian,Soltwisch Victor,Scholze Frank

Publisher

SPIE

Reference13 articles.

1. Experimental approach to EUV imaging enhancement by mask absorber height optimization;Davydova,2013

2. Experimental measurements of telecentricity errors in high-numerical-aperture extreme ultraviolet mask images

3. Imaging impact of multilayer tuning in EUV masks, experimental validation;Philipsen,2014

4. Modeling studies on alternative EUV mask concepts for higher NA;Erdmann,2013

5. Patterning of EUV binary etched multilayer mask;Takai,2013

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3. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask;Micro and Nano Engineering;2021-08

4. Optical constants and absorption properties of Te and TeO thin films in the 13-14 nm spectral range;Optics Express;2020-04-16

5. The potential of EUV lithography;35th European Mask and Lithography Conference (EMLC 2019);2019-08-29