Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks-Reference-Cited by-同舟云学术

Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks

Published:2014-02-21 Issue:1 Volume:13 Page:013009
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hirano Ryoichi¹,Iida Susumu¹,Amano Tsuyoshi¹,Terasawa Tsuneo¹,Watanabe Hidehiro¹,Hatakeyama Masahiro²,Murakami Takeshi²,Terao Kenji²

Affiliation:

1. EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken 305-8569, Japan

2. Ebara Corporation, 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Study of EUV mask inspection technique using DUV light source for hp22nm and beyond

2. Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

3. Performance of EBeyeM for EUV mask inspection

4. EUV mask pattern inspection using EB projection optics;Amano,2011

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3. Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection;SPIE Proceedings;2016-03-24

4. Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-22

5. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation;Extreme Ultraviolet (EUV) Lithography VII;2016-03-18