Study of EUV mask inspection technique using DUV light source for hp22nm and beyond-Reference-Cited by-同舟云学术

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Study of EUV mask inspection technique using DUV light source for hp22nm and beyond

Published:2010-09-30 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Hirano Ryoichi,Kikuiri Nobutaka,Hashimoto Hideaki,Takahara Kenichi,Hirono Masatoshi,Shigemura Hiroyuki

Publisher

SPIE

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography;Microelectronics Journal;2023-03

2. Influence of Illumination Polarization and Target Structure on Measurement Sensitivity of Through-Focus Scanning Optical Microscopy;Applied Sciences;2018-10-03

3. DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm;Photomask Technology;2017-10-16

4. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-06-24

5. Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system;SPIE Proceedings;2016-05-10

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