DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm-Reference-Cited by-同舟云学术

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DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm

Published:2017-10-16 Issue: Volume: Page:
ISSN:
Container-title:Photomask Technology
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Author:

Naka Masato,Ando Akihiko,Morishita Keiko,Yoshikawa Ryoji,Kamo Takashi,Hirano Takashi,Itoh Masamitsu

Publisher

SPIE

Reference25 articles.

1. International Technology Roadmap for Semiconductors 2013 Edition, Lithography, Table LITH6

2. Novel EUV mask inspection tool with 199-nm laser source and highresolution optics;Kikuiri,2009

3. Study of EUV mask inspection technique using DUV light source for hp 22nm and beyond;Hirano,2010

4. A novel defect detection optical system using 199-nm light source for EUVL mask;Hirano,2010

5. Development of a new mask pattern inspection tool NPI-7000 and applied results to EUV mask inspection;Hashimoto,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

2. Standard wafer with programed defects to evaluate the pattern inspection tools for 300-mm wafer fabrication for 7-nm node and beyond;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-06-19

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