Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system-Reference-Cited by-同舟云学术

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Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

Published:2011-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Shimomura Takeya,Kawashima Satoshi,Inazuki Yuichi,Abe Tsukasa,Takikawa Tadahiko,Mohri Hiroshi,Hayashi Naoya,Wang Fei,Ma Long Eric,Zhao Yan,Kuan Chiyan,Xiao Hong,Jau Jack

Publisher

SPIE

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-06-24

2. Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system;SPIE Proceedings;2016-05-10

3. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation;Extreme Ultraviolet (EUV) Lithography VII;2016-03-18

4. Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-08

5. Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-09-21

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