Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation-Reference-Cited by-同舟云学术

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Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Hirano Ryoichi¹,Iida Susumu¹,Amano Tsuyoshi¹,Watanabe Hidehiro¹,Hatakeyama Masahiro²,Murakami Takeshi²,Suematsu Kenichi²,Terao Kenji²

Affiliation:

1. EUVL Infrastructure Development Ctr., Inc. (Japan)

2. EBARA Corp. (Japan)

Publisher

SPIE

Reference19 articles.

1. Study of EUV mask inspection technique using DUV light source for hp 22 nm and beyond;Hirano,2010

2. Performance of EBeyeM for EUV Mask Inspection;Yamaguchi,2011

3. Demonstration of defect free EUV mask for 22 nm NAND flash contact Layer using electron beam inspection system;Shimomura,2011

4. Development of EB inspection system EBeyeM for EUV mask;Hirano,2010

5. Study of EUV mask inspection using projection EB optics with programmed pattern defect;Hirano,2012

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