Direct imaging of boron segregation to extended defects in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3526376
Reference21 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing
4. Ostwald ripening of end-of-range defects in silicon
5. The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
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