The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119563
Reference9 articles.
1. Point defect/dopant diffusion considerations following preamorphization of silicon via Si+and Ge+implantation
2. Using doping superlattices to study transient‐enhanced diffusion of boron in regrown silicon
3. TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects
4. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
5. Role of C and B clusters in transient diffusion of B in silicon
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