Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting-Reference-Cited by-同舟云学术

Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

Published:2023-09 Issue: Volume:164 Page:107641
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ndiaye Samba,Duguay Sébastien,Vurpillot François,Carraro Chiara,Maggioni Gianluigi,Di Russo Enrico,De Salvador Davide,Napolitani Enrico,Rigutti Lorenzo

Funder

Agence Nationale de la Recherche

Università degli Studi di Padova

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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