Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Abstract

Abstract We investigate the effectiveness of laser-induced treatment as compared to rapid-thermal annealing (RTA) for the activation of p-type dopant in Mg-doped GaN layers. The study is based on a wide set of analytical techniques, including resistivity measurements, atomic force microscopy (AFM), scanning emission microscopy, dynamic secondary ion mass spectroscopy (SIMS), time-of-flight (TOF) SIMS and energy dispersive x-ray (EDX) spectroscopy in combination with scanning transmission electron microscopy (STEM). Samples are treated at different energy densities and in different atmospheres, to provide a comprehensive overview of the topic. The analysis is carried out on GaN-on-Si samples, to demonstrate the effectiveness of the treatment even in presence of high threading dislocation densities. The original results presented in this paper indicate that: (a) laser treatment is an effective process for activating the p-type dopant in Mg-doped GaN layers; even at low irradiation energy densities (400 mJ cm−2) the laser treatment can effectively activate the Mg doping, with the best resistivity results obtained (around 1.5 Ωcm) comparable with those obtained by optimized RTA; (b) resistivity varies with temperature with activation energy E a = 0.14 eV, which is compatible with the MgGa acceptor in GaN; (c) TOF-SIMS, AFM, EDX-STEM analysis indicates that the laser treatment does not modify the concentration profile of magnesium and surface roughness for low and moderate laser energy densities; changes are detected only for energy densities above 600 mJ cm−2, for which a significant degradation of the surface is revealed. The experimental evidence collected within this paper provide an accurate assessment of the process conditions for effective laser activation of Mg-doped GaN, thus allowing the fine-tuning required for selective activation and for industrial applications.