Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

Published:1995-10-30 Issue:18 Volume:67 Page:2666-2668
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Götz W.,Johnson N. M.,Walker J.,Bour D. P.,Amano H.,Akasaki I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114330

Reference11 articles.

Cited by 144 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2024-02-03

4. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing;Journal of Applied Physics;2023-07-18

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