Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN-Reference-Cited by-同舟云学术

Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN

Published:2024-09 Issue:9 Volume:71 Page:5589-5596
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Zineng¹,Ma Yunwei¹,Porter Matthew¹^ORCID,Gong Hehe¹^ORCID,Du Zhonghao²^ORCID,Wang Han³,Luo Yi⁴,Wang Lai⁴^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA, USA

2. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, SAR, China

4. Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China

Funder

National Science Foundation

Virginia Innovation Partnership Corporation

Power Management Consortium and High Density Integration Consortium of Center for Power Electronics Systems, Virginia Tech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10645717/10620434-aam.pdf

Reference50 articles.

1. GaN-based light-emitting diodes on various substrates: a critical review

2. Gallium nitride vertical power devices on foreign substrates: a review and outlook

3. 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

4. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

5. Stability, Reliability, and Robustness of GaN Power Devices: A Review