Growth of p-type GaN – The role of oxygen in activation of Mg-doping
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Published:2023-06
Issue:
Volume:5
Page:100036
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ISSN:2772-3704
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Container-title:Power Electronic Devices and Components
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language:en
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Short-container-title:Power Electronic Devices and Components
Author:
Kumar Ashutosh,
Berg Martin,
Wang Qin,
Salter Michael,
Ramvall PeterORCID
Reference30 articles.
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3. Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes
4. On p‐type doping in GaN—acceptor binding energies
5. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
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