The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. Some aspects of damage annealing in ion‐implanted silicon: Discussion in terms of dopant anomalous diffusion
3. The role of point defects in anomalous diffusion of implanted boron in silicon
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