Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)-Reference-Cited by-同舟云学术

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

Published:2011-12-28 Issue:24 Volume:135 Page:244705
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Chagarov Evgueni A.,Kummel Andrew C.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3657439

Reference106 articles.

1. High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

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3. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

4. Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

5. Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

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