Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface

Published:2022-07-05 Issue:8 Volume:22 Page:4768-4776
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ciatto Gianluca¹^ORCID,Skopin Evgeniy V.²,Richard Marie-Ingrid³⁴,Fong Dillon D.⁵^ORCID,Renevier Hubert²^ORCID

Affiliation:

1. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette CEDEX, France

2. Univ. Grenoble Alpes, CNRS, Grenoble INP -UGA, LMGP, 38000 Grenoble, France

3. Univ. Grenoble Alpes, CEA Grenoble, IRIG, MEM, NRS, 38000 Grenoble, France

4. ID01/ESRF, The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France

5. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States

Funder

Agence Nationale de la Recherche

U.S. Department of Energy

Fondation Nanosciences

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00137

Reference48 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

3. Fundamentals of III-V Semiconductor MOSFETs

4. A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

5. Band offsets, Schottky barrier heights, and their effects on electronic devices

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP