Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2369645
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2. Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current;IEEE Electron Device Letters;2019-04
3. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation;The Journal of Chemical Physics;2016-02-28
4. First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2;Physica B: Condensed Matter;2014-02
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