Device structures and carrier transport properties of advanced CMOS using high mobility channels-Reference-Cited by-同舟云学术

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Device structures and carrier transport properties of advanced CMOS using high mobility channels

Published:2007-04 Issue:4 Volume:51 Page:526-536
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Takagi S.,Tezuka T.,Irisawa T.,Nakaharai S.,Numata T.,Usuda K.,Sugiyama N.,Shichijo M.,Nakane R.,Sugahara S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. International Technology Roadmap in Semiconductors (ITRS), .

2. Sadana D. Sematech Meeting. New channel materials for future MOSFET technology, 04 December, 2005.

3. Ghani T, Armstrong M, Auth C, Bost M, Charvat P, Glass G, et al., Tech Dig IEDM 2003. p. 978.

4. Tezuka T, Sugiyama N, Mizuno T, Takagi S, In: Proc VLSI Sympos 2002. p. 96.

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