Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)-Reference-Cited by-同舟云学术

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)

Published:2017-02-07 Issue:5 Volume:146 Page:052820
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Edmonds Mary¹,Sardashti Kasra¹,Wolf Steven¹,Chagarov Evgueni²,Clemons Max³,Kent Tyler¹,Park Jun Hong¹,Tang Kechao⁴,McIntyre Paul C.⁴,Yoshida Naomi⁵,Dong Lin⁵,Holmes Russell⁶,Alvarez Daniel⁶,Kummel Andrew C.¹²

Affiliation:

1. Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA

2. Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA

3. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA

4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

5. Applied Materials, Sunnyvale, California 94085, USA

6. Rasirc, Inc., San Diego, California 92126, USA

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4975081

Reference61 articles.

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