Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110487
Reference22 articles.
1. Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
2. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
4. Carbon diffusion in undoped,n‐type, andp‐type GaAs
5. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
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