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Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors

  • Published:2021-10 Issue: Volume:571 Page:126242
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Ben Saddik K.,Braña A.F.,López N.,García B.J.,Fernández-Garrido S.

Funder

European Research Council

Gobierno de Espana Ministerio de Ciencia Innovacion y Universidades

European Social Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference47 articles.

1. Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition;Furuhata;J. Appl. Phys.,1988

2. Carbon diffusion in undoped, n-type, and p-type GaAs;Cunningham;Appl. Phys. Lett.,1989

3. Semiconductors-Basic Data;Madelung,1996

4. The upper limits of useful n- and p-type doping in GaAs and AlAs;Newman;Mat. Sci. Eng. B-Adv.,1999

5. Current status review and future prospects of CBE, MOMBE and GSMBE;Tsang;J. Cryst. Growth,1991

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