Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97846
Reference8 articles.
1. Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
2. Dependence of Temporal Behavior of Conoscopic Figures in Nematic Liquid Crystals on Film Thickness
3. GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm
4. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
5. Flow-Rate Modulation Epitaxy of GaAs
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