Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323772
Reference24 articles.
1. Surface stoichiometry and structure of GaAs
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3. Ionized Zn doping of GaAs molecular beam epitaxial films
4. P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs
5. Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy
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