P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659789
Reference9 articles.
1. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
2. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
3. Surface structures and photoluminescence of molecular beam epitaxial films of GaAs
4. Epitaxy of silicon doped gallium arsenide by molecular beam method
5. A technique for directly plotting the inverse doping profile of semiconductor wafers
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