Doping Properties of GaAs Film Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Doping Properties of GaAs Film Grown by Molecular Beam Epitaxy

Published:2023-06-12 Issue:1 Volume:236 Page:174-181
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Liu Sining¹,Qi Xiaoyu¹,Zhang Qiang¹,Li Han¹,Gu Kaihui¹²,Fang Dan¹³

Affiliation:

1. Department of Electronic Engineering, Changchun college of Electronic Technology, Changchun, Jilin, China

2. School of Applied Sciences, Jilin Engineering Normal University, Changchun, Jilin, China

3. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin, China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2194820

Reference14 articles.

1. Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures

2. Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra

3. Raman, photoluminescence and morphological studies of Si- and N-doped diamond films grown on Si(100) substrate by hot-filament chemical vapor deposition technique

4. Photoluminescence Studies of Annealed GaAs Films Grown on Si Substrates

5. Susumu, et al., Photoluminescence studies of thin GaAs films grown on GaAs substrates by an ion beam deposition technique, Shinku 28 (10), 753 (1985).

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