Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment-Reference-Cited by-同舟云学术

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Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

Published:2020-07-13 Issue:31 Volume:124 Page:17299-17307
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Dubrovskii Vladimir G.¹^ORCID,Hijazi Hadi²^ORCID,Goktas Nebile Isik³,LaPierre Ray R.³^ORCID

Affiliation:

1. St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia

2. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

3. Department of Engineering Physics, McMaster University, Hamilton, L8S4L7 Ontario, Canada

Funder

Russian Science Foundation

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c04061

Reference43 articles.

2. Semiconductor Nanowire: What’s Next?

3. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

4. Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires

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3. Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers;Advanced Functional Materials;2023-12-08

4. Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions;Crystal Growth & Design;2023-06-09

5. Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications;Nanomaterials;2023-03-07

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