Flow-Rate Modulation Epitaxy of GaAs-Reference-Cited by-同舟云学术

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Flow-Rate Modulation Epitaxy of GaAs

Published:1985-12-20 Issue:Part 2, No. 12 Volume:24 Page:L962-L964
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Naoki,Makimoto Toshiki,Horikoshi Yoshiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 116 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion;Crystals;2023-04-21

2. Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine;Crystals;2021-11-19

3. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures;Light: Science & Applications;2021-07-20

4. 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature;Applied Physics Letters;2021-05-31

5. Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC;Semiconductor Science and Technology;2020-07-31

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