2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Intel Corporation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0050584
Reference28 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. GaN based transistors for high power applications
3. GaN-on-Si Power Technology: Devices and Applications
4. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
5. Low temperature AlN growth by MBE and its application in HEMTs
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