Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341356
Reference11 articles.
1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
2. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy
3. Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers
4. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
5. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
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