Effect of growth temperature on surface morphology and optical properties of undoped Al0.32Ga0.68As-Reference-Cited by-同舟云学术

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Effect of growth temperature on surface morphology and optical properties of undoped Al0.32Ga0.68As

Published:2021-03 Issue: Volume:604 Page:412619
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Dong Hailiang,Jia Tiantian,Jia Zhigang,Liang Jian,Liu Xuguang,Xu Bingshe

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Composition uniformity characterization and improvement of AlGaAs/GaAs grown by molecular beam epitaxy;Zhang;Mater. Sci. Semicond. Process.,2018

2. Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure;Bajelan;Superlattice. Microst.,2017

3. Advanced AlGaAs/GaAs heterostructures grown by MOVPE;Ladugin;Crystals,2019

4. Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering;Han;J. Appl. Phys.,2020

5. Epitaxial alloys of AlxGa1−xAs:Mg with different types of conductivity

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12

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