Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy
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