Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference37 articles.
1. A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12
2. Atomic-Scale Photon Mapping Revealing Spin-Current Relaxation;Physical Review Letters;2022-05-20
3. Contribution of inter-valley scattering in governing the steady state optical spin orientation in Al x Ga1−x As;Journal of Physics D: Applied Physics;2021-09-21
4. Signature of linear-in- k Dresselhaus splitting in the spin relaxation of X -valley electrons in indirect band gap AlGaAs;Physical Review B;2021-09-09
5. Prediction of inverse spin Hall devices based on the direct injection of carriers in L-valley of GaAs;Journal of Physics D: Applied Physics;2021-03-01
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