Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations
Author:
Affiliation:
1. Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences, Lothstr. 34, D-80335 Munich, Germany
2. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5006429
Reference25 articles.
1. LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
3. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
4. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
5. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
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