MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
2. Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz
3. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
4. Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
5. CBr4 and Be heavily doped InGaAs grown in a production MBE system
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5. Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C;Journal of Crystal Growth;2009-03
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