Carbon diffusion in undoped,n‐type, andp‐type GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101822
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1. Heterostructure bipolar transistors: What should we build?
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3. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
4. Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE
5. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
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