Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification-Reference-Cited by-同舟云学术

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Published:2014-11-17 Issue:20 Volume:105 Page:203507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Smets Quentin¹²,Verhulst Anne S.¹,Martens Koen¹,Lin Han Chung¹,Kazzi Salim El¹,Verreck Devin¹²,Simoen Eddy¹,Collaert Nadine¹,Thean Aaron¹,Raskin Jean-Pierre³,Heyns Marc M.¹²

Affiliation:

1. Imec, Kapeldreef 75, 3001 Heverlee, Belgium

2. KULeuven, 3000 Leuven, Belgium

3. ICTEAM, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium

Funder

Agentschap voor Innovatie door Wetenschap en Technologie (Agency for Innovation by Science and Technology, Flanders)

Fonds Wetenschappelijk Onderzoek (Flemish Research Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902117

Reference17 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Tunnel Field-Effect Transistors: State-of-the-Art

3. Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications

4. InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

5. Impact of field-induced quantum confinement in tunneling field-effect devices

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