Impact of drain doping engineering on ambipolar and high-frequency performance of ZHP line-TFET
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7ce7/pdf
Reference32 articles.
1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
2. Tunnel field-effect transistors as energy-efficient electronic switches
3. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
5. Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
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