Enhancing Performance and Versatility of DG-JL-TFET with A1N Piezoelectric Materials for High-Power Applications
Author:
Affiliation:
1. SRM Institute of Science and Technology,Department of Electronics and Communication Engineering,Chennai,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10547720/10547724/10547731.pdf?arnumber=10547731
Reference27 articles.
1. A Fast Overcurrent Protection IC for SiC MOSFET Based on Current Detection
2. Analysis fin field-effect transistor design with high-k insulators
3. Dynamic Current Sharing Mechanism Analysis of Paralleled SiC MOSFETs Considering Parasitic Mutual Inductances Based on an Improved Model
4. Design and Performance Analysis of High-k Gate All Around Fin-field Effect Transistor
5. Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects
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