A Fast Overcurrent Protection IC for SiC MOSFET Based on Current Detection
Author:
Affiliation:
1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an, China
2. School of Computing, Engineering and Mathematical Sciences, La Trobe University, Melbourne, Australia
Funder
National Natural Science Foundation of China
Shaanxi Innovation Capability Support
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/10478432/10414175.pdf?arnumber=10414175
Reference6 articles.
1. Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT
2. A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs
3. The Two-Dimensional Short-Circuit Detection Protection For SiC MOSFETs in Urban Rail Transit Application
4. Ultrafast Protection of Discrete SiC MOSFETs With PCB Coil-Based Current Sensors
5. Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules
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