Dynamic Current Sharing Mechanism Analysis of Paralleled SiC MOSFETs Considering Parasitic Mutual Inductances Based on an Improved Model
Author:
Affiliation:
1. State Key Laboratory of Advanced Electromagnetic Technology, Huazhong University of Science and Technology, Wuhan, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/10505871/10443563.pdf?arnumber=10443563
Reference29 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Comprehensive Efficiency, Weight, and Volume Comparison of SiC- and Si-Based Bidirectional DC–DC Converters for Hybrid Electric Vehicles
3. Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey
4. A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization
5. Changes and challenges of photovoltaic inverter with silicon carbide device
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