InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models-Reference-Cited by-同舟云学术

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Published:2014-05-14 Issue:18 Volume:115 Page:184503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Smets Quentin,Verreck Devin,Verhulst Anne S.,Rooyackers Rita,Merckling Clément,Van De Put Maarten,Simoen Eddy,Vandervorst Wilfried,Collaert Nadine,Thean Voon Y.,Sorée Bart,Groeseneken Guido,Heyns Marc M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4875535

Reference41 articles.

1. Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

2. Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

3. InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

4. Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method

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