Impact of field-induced quantum confinement in tunneling field-effect devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3573812
Reference11 articles.
1. A new three-terminal tunnel device
2. Silicon surface tunnel transistor
3. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
4. Scaling the Vertical Tunnel FET With Tunnel Bandgap Modulation and Gate Workfunction Engineering
5. Tunnel field-effect transistor without gate-drain overlap
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