Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5543947/5551849/05551856.pdf?arnumber=5551856
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance Analysis of Tunnel FET Based Ring Oscillator Using Sentaurus TCAD;Silicon;2022-01-07
2. III-V Tunnel Field-Effect Transistor;Fundamentals of Tunnel Field-Effect Transistors;2016-10-04
3. A comprehensive investigation of silicon film thickness ( T SI ) of nanoscale DG TFET for low power applications;Advances in Natural Sciences: Nanoscience and Nanotechnology;2016-08-01
4. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors;Journal of Applied Physics;2014-12-07
5. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification;Applied Physics Letters;2014-11-17
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