Performance Analysis of Tunnel FET Based Ring Oscillator Using Sentaurus TCAD
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01509-2.pdf
Reference35 articles.
1. Koswatta S, Lundstrom M, Nikonov D (2009) Performance comparison between p-i-n tunneling transistors and conventional MOSFETs. IEEE Trans Electron Devices 56(3):456–465
2. Kaushal G, Subramanyam K, Rao S. N, Vidya G, Ramya R, Shaik S, Jeong H, Jung S, Vaddi R (2014) Design and performance benchmarking of steep-slope tunnel transistors for low voltage digital and analog circuits enabling self-powered socs. In: 2014 international SoC design conference (ISOCC). IEEE, pp 32–33
3. Singh J, Ramakrishnan K, Mookerjea S, Datta S, Vijaykrishnan N, Pradhan D (2010) A novel Si-tunnel FET based SRAM design for ultra low-power 0.3V vDD applications. In: Proceedings of the Asia and South Pacific design automation conference, ASP-DAC, pp 181–186
4. (2013) The International Technology Roadmap for Semiconductors (ITRS-2013): Electronic Research Devices, http://www.itrs.net/
5. Zhang Q, Seabaugh A (2008) Can the Interband tunnel FET outperform Si CMOS?. In: Device Research Conference, pp 73–74
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