Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
Author:
Affiliation:
1. imec, Kapeldreef 75, 3001 Leuven, Belgium
2. Department of Electrical Engineering, KU Leuven, Leuven, Belgium
Funder
imec
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903288
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3. The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in ${\rm p}^{+}$-SiGe/${\rm n}^{+}$-SiGe Junctions in Forward and Reverse Biases
4. Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
5. Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
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