Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction-Reference-Cited by-同舟云学术

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Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Published:2007-12-10 Issue:24 Volume:91 Page:243505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Toh Eng-Huat,Wang Grace Huiqi,Chan Lap,Samudra Ganesh,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2823606

Reference11 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Complementary tunneling transistor for low power application

3. A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET

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