Peripheral current analysis of silicon p–n junction and gated diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1324691
Reference19 articles.
1. p-n junction peripheral current analysis using gated diode measurements
2. Analysis ofn+psilicon junctions with varying substrate doping concentrations made under ultraclean processing technology
3. Accurate extraction of the diffusion current in silicon p-n junction diodes
4. Optimized Diode Analysis of Electrical Silicon Substrate Properties
5. Characterization of Corner-Induced Leakage Current of a Shallow Silicided n+/p Junction for Quarter-Micron MOSFETs
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