p-n junction peripheral current analysis using gated diode measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121641
Reference17 articles.
1. Impact of oxygen related extended defects on silicon diode characteristics
2. Extraction of the minority carrier recombination lifetime from forward diode characteristics
3. Accurate extraction of the diffusion current in silicon p-n junction diodes
4. Calculation of Diffusion Component of Leakage Current in pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
5. Separation and analysis of diffusion and generation components ofpnjunction leakage current in various silicon wafers
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