Accurate extraction of the diffusion current in silicon p-n junction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120962
Reference11 articles.
1. A comprehensive method combining deep-depletion profiling and capacitance transients to evaluate energy and depth distribution of MOS bulk defects
2. Separation and analysis of diffusion and generation components ofpnjunction leakage current in various silicon wafers
3. Analysis ofn+psilicon junctions with varying substrate doping concentrations made under ultraclean processing technology
4. Oxygen precipitation effects on Sin+‐pjunction leakage behavior
5. Impact of silicon substrates on leakage currents
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