Separation and analysis of diffusion and generation components ofpnjunction leakage current in various silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356091
Reference12 articles.
1. Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
2. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
3. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
4. Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
5. Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique
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